copyright ? 2002 semicoa semiconductors, inc. rev. k 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 1 of 1 www. semicoa .com 2N2906AUB silicon pnp transisto r data sheet description semicoa semiconductors offers: ? screening and processing per mil-prf-19500 appendix e ? jan level (2N2906AUBj) ? jantx level (2N2906AUBjx) ? jantxv level (2N2906AUBjv) ? jans level (2N2906AUBjs) ? qci to the applicable level ? 100% die visual inspection per mil-std-750 method 2072 for jantxv and jans ? radiation testing (total dose) upon request please contact semicoa for special configurations www. semicoa .com or (714) 979-1900 applications ? general purpose ? low power ? pnp silicon transistor features ? hermetically sealed cersot ceramic ? also available in chip configuration ? chip geometry 0600 ? reference document: mil-prf-19500/291 benefits ? qualification levels: jan, jantx, jantxv and jans ? radiation testing available absolute maximum ratings t c = 25 c unless otherwise specified parameter symbol rating unit collector-emitter voltage v ceo 60 volts collector-base voltage v cbo 60 volts emitter-base voltage v ebo 5 volts collector current, continuous i c 600 ma power dissipation, t a = 25 o c derate linearly above 37.5 o c p t 0.5 3.08 w mw/ c thermal resistance r ja 325 c/w operating junction temperature t j -65 to +200 c storage temperature t stg -65 to +200 c
copyright ? 2002 semicoa semiconductors, inc. rev. k 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 2 of 2 www. semicoa .com 2N2906AUB silicon pnp transisto r data sheet electrical characteristics characteristics specified at t a = 25 c off characteristics parameter symbol test conditions min typ max units collector-emitter breakdown voltage v (br)ceo i c = 10 ma 60 volts collector-base cutoff current i cbo1 v cb = 60 volts 10 a collector-base cutoff current i cbo2 v cb = 50 volts 10 na collector-base cutoff current i cbo3 v cb = 50 volts, t a = 150 o c 10 a collector-emitter cutoff current i ces v ce = 50 volts 50 na emitter-base cutoff current i ebo1 v eb = 5 volts 10 a emitter-base cutoff current i ebo2 v eb = 4 volts 50 na on characteristics pulse test: pulse width = 300 s, duty cycle 2.0% parameter symbol test conditions min typ max units dc current gain h fe1 h fe2 h fe3 h fe4 h fe5 h fe6 i c = 0.1 ma, v ce = 10 volts i c = 1.0 ma, v ce = 10 volts i c = 10 ma, v ce = 10 volts i c = 150 ma, v ce = 10 volts i c = 500 ma, v ce = 10 volts i c = 10 ma, v ce = 10 volts t a = -55 o c 40 40 40 40 40 20 175 120 base-emitter saturation voltage v besat1 v besat2 i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 0.6 1.3 2.6 volts collector-emitter saturation voltage v cesat1 v cesat2 i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 0.4 1.6 volts dynamic characteristics parameter symbol test conditions min typ max units magnitude ? common emitter, short circuit forward curre nt transfer ratio |h fe | v ce = 20 volts, i c = 20 ma, f = 100 mhz 2.0 small signal short circuit forward current transfer ratio h fe v ce = 10 volts, i c = 1 ma, f = 1 khz 40 open circuit output capacitance c obo v cb = 10 volts, i e = 0 ma, 100 khz < f < 1 mhz 8 pf open circuit input capacitance c ibo v eb = 0.5 volts, i c = 0 ma, 100 khz < f < 1 mhz 30 pf switching characteristics saturated turn-on time t on 45 ns saturated turn-off time t off 300 ns
|
